Spintronic Memory Lab
Control Electron Spins Like Tiny Magnets!
Explore how electron spin creates next-generation memory devices. Simulate spin-transfer torque, magnetic tunneling junctions, and domain wall motion β the technology behind your smartphone's storage, earning the 2007 Nobel Prize in Physics.
π€ What Is Spintronic Memory?
Think of using the spin of electrons like tiny compass needles to store data β instead of charging and draining capacitors billions of times per second, spintronics reads the magnetic orientation of individual electrons, achieving speed and permanence in one device.
Why does this matter? STT-MRAM combines the speed of SRAM with the permanence of flash β Samsung began mass-producing 28nm MRAM in 2019. Spin-orbit torque devices switch in under 1 nanosecond. In this simulator, flip electron spins with magnetic fields and current pulses, observing how spin states encode persistent bits.
πΎ Interactive 8-Bit Memory Array
Click any bit to flip its spin state! β = 1 (parallel), β = 0 (antiparallel)
π Memory Technology Comparison
| Technology | Speed | Endurance | Standby Power | Non-volatile |
|---|---|---|---|---|
| STT-MRAM | 1 ns | 10ΒΉβ΅ | Zero | β Yes |
| DRAM | 10 ns | β | High | β No |
| Flash (SSD) | 50 ΞΌs | 10β΅ | Zero | β Yes |
| SRAM | 0.5 ns | β | Medium | β No |